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FDB2670 N-Channel MOSFET

FDB2670 Description

FDP2670/FDB2670 November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.

FDB2670 Features

* 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
* Low gate charge (27 nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D D G G D S TO-220 FDP Series G S TO-263AB

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