FDB2614 N-Channel MOSFET

Fairchild Semiconductor

Description

FDB2614 * N-Channel PowerTrench® MOSFET November 2013 FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ .
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resista.

📥 Download Datasheet

FDB2614 Datasheet Preview — Preview of FDB2614 PDF

Datasheet Specifications

Part number: FDB2614
Manufacturer: Fairchild Semiconductor
File Size: 0.99 MB
Datasheet: FDB2614_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 22.9 mΩ ( Typ. )@ VGS = 10 V, ID = 31 A
* High Performance Trench technology for Extremely Low RDS(on)
* Low Gate Charge

Applications

* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Cur

FDB2614 Distributors

📁 Related Datasheet

FDB2532-F085 FDB2552 FDB2570 FDB2572 FDB2710 FDB035AN06A0

📌 All Tags

FDB2614 N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDB2614-like datasheet