FDB047N10 MOSFET

Fairchild Semiconductor

Description

FDB047N10 * N-Channel PowerTrench® MOSFET FDB047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.7 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

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Datasheet Specifications

Part number: FDB047N10
Manufacturer: Fairchild Semiconductor
File Size: 565.29 KB
Datasheet: FDB047N10-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 3.9 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM

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FDB047N10 MOSFET Fairchild Semiconductor

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