FDB0260N1007L - 100V 200A N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDB0260N1007L
Manufacturer	Fairchild Semiconductor
File Size	307.92 KB
Description	100V 200A N-Channel MOSFET
Datasheet	FDB0260N1007L-FairchildSemiconductor.pdf

FDB0260N1007L Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications. Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Operated tools Battery Protection Solar Inverters UPS and Energy Inverters

Features

Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant General.

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Published: Aug 26, 2025 |