FDB0260N1007L 100V 200A N-Channel MOSFET

Fairchild Semiconductor

Description

FDB0260N1007L N-Channel PowerTrench® MOSFET FDB0260N1007L N-Channel PowerTrench® MOSFET 100 V, 200 A, 2.6 mΩ March 2016 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-st.

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Datasheet Specifications

Part number: FDB0260N1007L
Manufacturer: Fairchild Semiconductor
File Size: 307.92 KB
Datasheet: FDB0260N1007L-FairchildSemiconductor.pdf
Description: 100V 200A N-Channel MOSFET

Features

* Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Applications
* Industrial Motor Drive
* Industrial Power Supply
* Industrial Automation
* Battery Operated tools
* Battery Protection
* Solar Inverters
* UPS and Energy Inverters
* Energy Storage
* Load Switch 123 567 4 1. G

FDB0260N1007L Distributors

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FDB0260N1007L 100V 200A N-Channel MOSFET Fairchild Semiconductor

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