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FDB0250N807L 80V 240A N-Channel MOSFET

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Description

FDB0250N807L N-Channel PowerTrench® MOSFET March 2016 FDB0250N807L N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.2 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-st.

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Features

* Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.7 mΩ at VGS = 8 V, ID = 27 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Applications
* Industrial Motor Drive
* Industrial Power Supply
* Industrial Automation
* Battery Operated tools
* Battery Protection
* Solar Inverters
* UPS and Energy Inverters
* Energy Storage
* Load Switch 123 567 4 1. G

FDB0250N807L Distributors

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