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FCPF13N60NT, FCP13N60N N-Channel MOSFET

FCPF13N60NT Description

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258Ω .
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it.

FCPF13N60NT Features

* RDS(on) = 0.244Ω ( Typ. ) @ VGS = 10V, ID = 6.5A
* Ultra Low Gate Charge ( Typ. Qg = 30.4nC)
* Low Effective Output Capacitance
* 100% Avalanche Tested

FCPF13N60NT Applications

* D G G D S TO-220 FCP Series GD S TO-220F FCPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage -Continuous (TC = 25oC) - Pulsed FCP13N60N FCPF13N60NT 600 ±30 13 8.2 (Note 1) (Note 2) 39 235

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This datasheet PDF includes multiple part numbers: FCPF13N60NT, FCP13N60N. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
FCPF13N60NT, FCP13N60N
Manufacturer
Fairchild Semiconductor
File Size
939.79 KB
Datasheet
FCP13N60N_FairchildSemiconductor.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: FCPF13N60NT, FCP13N60N.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FCPF13N60NT-like datasheet