Datasheet Details
- Part number
- FCP9N60N
- Manufacturer
- Fairchild Semiconductor
- File Size
- 945.59 KB
- Datasheet
- FCP9N60N_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FCP9N60N Description
FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT N-Channel MOSFET 600V, 9A, 0.385Ω .
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it.
FCP9N60N Features
* RDS(on) = 0.33Ω ( Typ. )@ VGS = 10V, ID = 4.5A
* Ultra low gate charge ( Typ. Qg = 22nC)
* Low effective output capacitance
* 100% avalanche tested
FCP9N60N Applications
* D
G G D S
TO-220 FCP Series
GD S
TO-220F FCPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
* Symbol VDSS www. DataSheet4U. com V
GSS
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repe
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