FCP9N60N N-Channel MOSFET

Fairchild Semiconductor

Description

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT N-Channel MOSFET 600V, 9A, 0.385Ω .
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it.

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Datasheet Specifications

Part number: FCP9N60N
Manufacturer: Fairchild Semiconductor
File Size: 945.59 KB
Datasheet: FCP9N60N_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 0.33Ω ( Typ. )@ VGS = 10V, ID = 4.5A
* Ultra low gate charge ( Typ. Qg = 22nC)
* Low effective output capacitance
* 100% avalanche tested

Applications

* D G G D S TO-220 FCP Series GD S TO-220F FCPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted
* Symbol VDSS www. DataSheet4U. com V GSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repe

FCP9N60N Distributors

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FCP9N60N N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FCP9N60N-like datasheet