EMZB08P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMZB08P03V
Manufacturer	Excelliance MOS
File Size	875.29 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMZB08P03V Datasheet
Additional preview pages of the EMZB08P03V datasheet.

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Full PDF Text Transcription

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMZB08P03V LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TA = 25 °C TC = 100 °C IDM -25 -14 A -18 -100 Avalanche Current Avalanche Energy IAS L = 0.1mH, IAS=-25A, RG=25Ω EAS -25 31.25 mJ Power Dissipation TC = 25 °C TC = 100 °C 21 PD W 8.3 Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.

Published: Apr 27, 2017 |