EMZB08P03G Datasheet (Excelliance MOS) - P?Channel Logic Level Enhancement Mode Field Effect Transistor

EMZB08P03G, P?Channel Logic Level Enhancement Mode Field Effect Transistor

EMZB08P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 8.5mΩ ID ‐15A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=‐25A, RG=25Ω Power Dissipation TA = 25 °