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EMB12N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB12N03HR
Manufacturer Excelliance MOS
File Size 212.73 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB12N03HR Datasheet

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EMB12N03HR N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 25A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 25 ID TC = 100 °C 20 IDM 100 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH, ID=30A, RG=25Ω EAS 45 Repetitive Avalanche Energy2 L = 0.05mH EAR 22.5 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 35 14 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.
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