• Part: EMB12N03V
  • Description: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 364.01 KB
Download EMB12N03V Datasheet PDF
Excelliance MOS
EMB12N03V
Description : N-CH BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 30V 11.5mΩ 16.0mΩ 39A ID @TA=25℃ 9.9A Single N Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage ±20 Continuous Drain Current TC = 25 °C TC = 100 °C 39 24 Continuous Drain Current TA = 25 °C TA = 70 °C 9.9 7.9 Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1m H L = 0.05m H Power Dissipation TC = 25 °C TC = 100 °C 31 13 Power Dissipation TA = 25 °C TA = 70 °C 2.0...