EMB12N03G
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
12mΩ
12A
UIS, Rg 100% Tested
Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1m H, ID=12A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05m H
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
2.5 1 -55 to 150
100% UIS testing in condition of VD=15V, L=0.1m H, VG=10V, IL=15A, Rated VDS=25V N-CH THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL...
