EMB09P03V Datasheet (Excelliance MOS) - P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB09P03V, P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 9.5mΩ ID ‐24A P‐Channel MOSFET UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TA = 25 °C TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS=‐25A, RG=25Ω EAS Repetiti