EMB09P03H Datasheet (Excelliance MOS) - P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB09P03H, P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) @VGS=-10V RDSON (MAX.) @VGS=-4.5V 9.5mΩ 17mΩ ID@TC=25°C -59A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB09P03H LIMITS UNIT Gate-Source Voltage VGS ±25 V TC = 25 °C Continuous Drain Current ID TA= 25 °C(t≦10s) -59 -20 A TA= 25 °C(Stea