EMB09P03A - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB09P03A
Manufacturer	Excelliance MOS
File Size	386.22 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09P03A Datasheet

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EMB09P03H	P-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB09P03A P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) @VGS=-10V RDSON (MAX.) @VGS=-4.5V 9mΩ 17mΩ ID@TC=25°C -60A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH EAS Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 100% UIS testing in condition of VD=-15V, L=0.

Published: Apr 26, 2017 |