EMB09P03H - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB09P03H
Manufacturer	Excelliance MOS
File Size	350.10 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09P03H Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB09P03A	P-Channel Logic Level Enhancement Mode Field Effect Transistor
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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) @VGS=-10V RDSON (MAX.) @VGS=-4.5V 9.5mΩ 17mΩ ID@TC=25°C -59A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB09P03H LIMITS UNIT Gate-Source Voltage VGS ±25 V TC = 25 °C Continuous Drain Current ID TA= 25 °C(t≦10s) -59 -20 A TA= 25 °C(Steady-State) -13 Pulsed Drain Current1 TC = 100 °C -37 IDM -184 Avalanche Current IAS -53 Avalanche Energy L = 0.