EMB09P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ ID @TA=25℃ P-CH -30V 9.5mΩ 18mΩ -57A -12A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS

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EMB09P03V p-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMB09P03V
Manufacturer	Excelliance MOS
File Size	356.84 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09P03V Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB09P03A	P-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB09P03V Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ ID @TA=25℃ P-CH -30V 9.5mΩ 18mΩ -57A -12A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current1 TC = 25 °C TC = 100 °C Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1 Avalanche Energy1 Repetitive Avalanche Energy2 TA = 25 °C TA = 70 °C L = 0.1mH L = 0.