M24L16161DA - 16-Mbit (1M x 16) Pseudo Static RAM

Elite Semiconductor Memory Technology

M24L16161DA Description

ESMT Revision History : Revision 1.0 (Jul.4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc.Publicat.
of read and write modes.

M24L16161DA Features

* Wide voltage range: 2.2V
* 3.6V
* Access Time: 70 ns
* Ultra-low active power
* Typical active current: 3 mA @ f = 1 MHz
* Typical active current: 18 mA @ f = fmax
* Ultra low standby power
* Automatic power-down when deselected

M24L16161DA Applications

* such as cellular telephones. The device can be put into standby mode when deselected ( CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected ( CE1 Logic Block Diagram Elite Semiconductor Memory Technolog

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Datasheet Details

Part number: M24L16161DA
Manufacturer: Elite Semiconductor Memory Technology
File Size: 380.10 KB
Datasheet: M24L16161DA_EliteSemiconductorMemoryTechnology.pdf
Description: 16-Mbit (1M x 16) Pseudo Static RAM

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16-Mbit Pseudo Static RAM Elite Semiconductor Memory Technology

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