M24L216128SA 2-Mbit (128K x 16) Pseudo Static RAM

Elite Semiconductor Memory Technology

Description

ESMT PSRAM .
of read and write modes.

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Datasheet Specifications

Part number: M24L216128SA
Manufacturer: Elite Semiconductor Memory Technology
File Size: 373.28 KB
Datasheet: M24L216128SA_EliteSemiconductorMemoryTechnology.pdf
Description: 2-Mbit (128K x 16) Pseudo Static RAM

Features

* Wide voltage range: 2.7V
* 3.6V
* Access Time: 55 ns, 70 ns
* Ultra-low active power
* Typical active current: 1mA @ f = 1 MHz
* Typical active current: 14 mA @ f = fmax (For 55-ns)
* Typical active current: 8 mA @ f = fmax (For 70-ns)

Applications

* such as cellular telephones. The device can be put into standby mode when deselected ( CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the chip is deselected ( CE HIGH), or when the outputs are disabled ( OE HIGH), or Logic

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M24L216128SA 2-Mbit 128K Pseudo Static RAM Elite Semiconductor Memory Technology

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