M13S32321A - 256K x 32 Bit x 4 Banks Double Data Rate SDRAM

Elite Semiconductor Memory Technology

The M13S32321A by Elite Semiconductor Memory Technology is a 256K x 32 Bit x 4 Banks Double Data Rate SDRAM. Below is the official datasheet preview.

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M13S32321A 256K x 32 Bit x 4 Banks Double Data Rate SDRAM by Elite Semiconductor Memory Technology - Datasheet Preview — Official preview page of the **M13S32321A** 256K x 32 Bit x 4 Banks Double Data Rate SDRAM datasheet (Elite Semiconductor Memory Technology).

Datasheet Details

Part number	M13S32321A
Manufacturer	Elite Semiconductor Memory Technology
File Size	825.46 KB
Description	256K x 32 Bit x 4 Banks Double Data Rate SDRAM
Datasheet	M13S32321A_EliteSemiconductorMemoryTechnology.pdf
Additional preview pages of the M13S32321A datasheet.

M13S32321A Product details

Description

(M13S32321A) Pin Name Function Address inputs - Row address A0~A9 - Column address A0~A7 A8/AP : AUTO Precharge BA0, BA1 : Bank selects (4 Banks) Data-in/Data-out Row address strobe Column address strobe Write enable Ground Power Bi- directional Data Strolle.Pin Name M13S32321A Function A0~A9, BA0,BA1 DQ0~3 DQ Mask enable in write cycle.DQ0~DQ31 RAS CAS WE CLK, CLK CKE CS VDDQ VSSQ VREF NC Clock input Clock enable Chip select Supply Voltage for GDQ Ground for DQ Reference Voltage for S

Features

z z z z z z z z z z z z z z z z z z z M13S32321A 256K x 32 Bit x 4 Banks Double Data Rate SDRAM JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition Quad bank operation CAS Latency : 3; 4 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8 All inputs except data & DM are sampled at the rising edge of the.

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Other Datasheets by Elite Semiconductor Memory Technology

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Published: Sep 17, 2009 |