M13S128168A Datasheet (Elite Semiconductor Memory Technology)

M13S128168A, Double Data Rate SDRAM

Pin Name Function Pin Name Function A0~A11, BA0, BA1 Address inputs - Row address A0~A11 - Column address A0~A8 A10/AP: AUTO Precharge BA0, BA1: Bank selects (4 Banks) DM is an input mask signal for write data.

LDM, UDM LDM corresponds to the data on DQ0~DQ7; UDM correspond to the data on DQ8~D

M13S128168A Features

* Double-data-rate architecture, two data transfers per clock cycle

* Bi-directional data strobe (DQS)

* Differential clock inputs (CLK and CLK )

* DLL aligns DQ and DQS transition with CLK transition

* Four bank operation

* CAS Latency : 2, 2.5, 3

* Burst Type : Sequent