AO9926A Dual N-Channel MOSFET

Description

Jan 2003 AO9926A Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: AO9926A
Manufacturer: ETC
File Size: 293.40 KB
Datasheet: AO9926A_ETC.pdf
Description: Dual N-Channel MOSFET

Features

* VDS (V) = 20V ID = 7A RDS(ON) < 26m Ω (VGS = 4.5V) RDS(ON) < 33m Ω (VGS = 2.5V) RDS(ON) < 42m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Co

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AO9926A Dual N-Channel MOSFET ETC

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