Datasheet Details
| Part number | AO9926 |
|---|---|
| Manufacturer | Alpha Industries |
| File Size | 234.80 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 AO9926 Datasheet
|
|
|
General Description
The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 8V.
The two devices may be used individually, in parallel or to form a bidirectional blocking switch.
Key Features
- VDS (V) = 20V ID = 5A RDS(ON) < 50m Ω (VGS = 4.5V) RDS(ON) < 65m Ω (VGS = 2.5V) RDS(ON) < 90m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 20 ±8 5 4.2 20 2 1.28 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Sto.