Description
The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
Features
- VDS (V) = 20V ID = 8A (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 4.5V) RDS(ON) < 25mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D2
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
A B
Maximum 20 ±8 8 6.4 30 2 1.28 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM P.
AO9926E-AlphaOmegaSemiconductors.pdf
