3N155A Datasheet (ETC) - P-channel Transistor

3N155A, P-channel Transistor

3N 155,A (SILICON) 3N156,A P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application.

CASE 20 (T0-72) O2 o STYLE Z PIN 1.

SOURCE Z.

GATE 1 000 3 3.

DRAIN 4.

SUBSTRATE AND CASE LEAD MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS 1D