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3N150-E3 - N-CHANNEL POWER MOSFET

Description

The UTC 3N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S0.
  • RDS(ON) ≤ 7.5 Ω @ VGS=10V, ID=1.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness 1 TO-263 1 Power MOSFET 1 TO-220F1 1 TO-247 TO-3PF.
  • SYMBOL 1 1 TO-3P TO-3PN.

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Other Datasheets by Unisonic Technologies

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 3N150-E3 3.0A, 1500V N-CHANNEL POWER MOSFET 1 TO-220  DESCRIPTION The UTC 3N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.5 Ω @ VGS=10V, ID=1.
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