EPC1007 Datasheet - EPC

EPC1007 Power Transistor

DATASHEET EPC1007 Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A EPC1007 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zer.

EPC1007 Datasheet (892.51 KB)