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ZXMS6006DT8Q - N-Channel MOSFET

General Description

The ZXMS6006DT8Q is a dual self protected low side MOSFET with logic level input.

It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality.

Key Features

  • Continuos Drain Source Voltage 60V.
  • On-State Resistance 100mΩ.
  • Nominal Load Current (VIN = 5V) 2.8A.
  • Clamping Energy 210mJ.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION   Green ZXMS6006DT8Q 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • On-State Resistance 100mΩ • Nominal Load Current (VIN = 5V) 2.8A • Clamping Energy 210mJ Description The ZXMS6006DT8Q is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DT8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.