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ZXMS6006SGQ - N-Channel MOSFET

Description

The ZXMS6006SGQ is a self protected low side MOSFET with logic level input.

It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality.

Features

  • Compact High Power Dissipation Package.
  • Low Input Current.
  • Logic Level Input (3.3V and 5V).
  • Short Circuit Protection with Auto Restart.
  • Over Voltage Protection (active clamp).
  • Thermal Shutdown with Auto Restart.
  • Over-Current Protection.
  • Input Protection (ESD).
  • High Continuous Current Rating.
  • Lead-Free Finish; RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Full PDF Text Transcription

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ADVANCE INFORMATION ZXMS6006SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary • Continuos Drain Source Voltage 60V • On-State Resistance 100mΩ • Nominal Load Current (VIN = 5V) 2.8A • Clamping Energy 480mJ Description and Applications The ZXMS6006SGQ is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006SGQ is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
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