Datasheet4U Logo Datasheet4U.com

ZXMS6006DT8QTA - N-Channel MOSFET

Download the ZXMS6006DT8QTA datasheet PDF. This datasheet also covers the ZXMS6006DT8Q variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ZXMS6006DT8Q is a dual self protected low side MOSFET with logic level input.

It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality.

Features

  • Continuos Drain Source Voltage 60V.
  • On-State Resistance 100mΩ.
  • Nominal Load Current (VIN = 5V) 2.8A.
  • Clamping Energy 210mJ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ZXMS6006DT8Q-Diodes.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
ZXMS6001N3 60V N-Channel MOSFET Zetex Semiconductors
ZXMS6002G N-Channel MOSFET Zetex Semiconductors
ZXMS6003G N-channel self protected enhancement mode IntelliFET MOSFET Zetex Semiconductors
ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Diodes Incorporated
ZXMS6004FF 60V N-Channel MOSFET Diodes Incorporated

Other Datasheets by Diodes Incorporated

Part Number Description
ZXMS6006DT8Q N-Channel MOSFET
ZXMS6006DGQ N-Channel MOSFET
ZXMS6006DGQ-13 60V N-CHANNEL MOSFET
ZXMS6006SGQ N-Channel MOSFET
ZXMS6006SGQTA N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
ADVANCE INFORMATION   Green ZXMS6006DT8Q 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • On-State Resistance 100mΩ • Nominal Load Current (VIN = 5V) 2.8A • Clamping Energy 210mJ Description The ZXMS6006DT8Q is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DT8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
Published: |