DMN65D8LW N-Channel MOSFET

Diodes

Description

DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(on) Max 3Ω @ VGS = 10V 4Ω @ VGS = 5V ID TA = +25°C 300mA 260mA .
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching perform.

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Datasheet Specifications

Part number: DMN65D8LW
Manufacturer: DIODES ↗
File Size: 431.27 KB
Datasheet: DMN65D8LW-Diodes.pdf
Description: N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surface Mount Package
* ESD Protected Gate, 1KV (HBM)
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimon

Applications

* requiring specific change control (i. e. : parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www. diodes. com/products/automotive/automotiveproducts/.

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DMN65D8LW N-Channel MOSFET Diodes

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