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DMN65D8LFB N-Channel MOSFET

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Description

DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BVDSS 60V RDS(ON) 3.0Ω @ VGS = 10V 4.0Ω @ VGS = 5V ID TA = +25°C 400mA 330mA D.
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, whi.

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Features

* N-Channel MOSFET
* Low On-Resistance
* Low Gate-Threshold Voltage
* Low-Input Capacitance
* Fast Switching Speed
* Small-Surface Mount Package
* ESD Protected Gate, 1.2kV HBM
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.
* DC-DC Converters
* Power Management Functions
* Battery Operated Systems and Solid-S

DMN65D8LFB Distributors

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