Datasheet4U Logo Datasheet4U.com

DMN6010SCTB - 60V N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Motor Controls Engine Management Systems Body Control Electroni

Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

📥 Download Datasheet

Datasheet preview – DMN6010SCTB

📁 Similar Datasheet

  • DMN6017SK3 - N-Channel MOSFET (INCHANGE)
  • DMN601DMK - N-Channel MOSFET (Diodes Incorporated)
  • DMN601DWK - N-Channel MOSFET (Diodes Incorporated)
  • DMN601K - N-Channel MOSFET (Diodes Incorporated)
  • DMN601TK - N-Channel MOSFET (Diodes Incorporated)
  • DMN601VK - N-Channel MOSFET (Diodes Incorporated)
  • DMN601WK - N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes Incorporated)
  • DMN600V - N-Channel MOSFET (Diodes Incorporated)
  • DMN6040SK3 - N-Channel MOSFET (INCHANGE)
  • DMN6040SK3 - 60V N-Channel MOSFET (Diodes Incorporated)
Other Datasheets by DIODES

Full PDF Text Transcription

Click to expand full text
Green DMN6010SCTB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 10mΩ @ VGS = 10V ID Max TC = +25°C 128A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Motor Controls  Engine Management Systems  Body Control Electronics  DC-DC Converters Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Low RDS(on) – Minimizes Power Losses  Low Qg – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
Published: |