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DMG4932LSD - ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Overview

Diodes

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DMG4932LSD ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET by Diodes - Datasheet Preview — Datasheet preview – DMG4932LSD

Datasheet Details

Part number	DMG4932LSD
Manufacturer	DIODES
File Size	486.16 KB
Description	ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DMG4932LSD Datasheet
Additional preview pages of the DMG4932LSD datasheet.

Product details

Features

High Density UMOS with Schottky Barrier Diode.
Low Leakage Current at High Temp.
High Conversion Efficiency.
Low On-Resistance.
Low Input Capacitance.
Fast Switching Speed.
Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficiency.
100% UIS and Rg Tested.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Re.

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Published: Mar 15, 2017 |