DMG4N60SJ3 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	DMG4N60SJ3
Manufacturer	INCHANGE
File Size	268.87 KB
Description	N-Channel MOSFET
Datasheet	DMG4N60SJ3-INCHANGE.pdf

DMG4N60SJ3 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±30 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Pluse 6 A PD Total Dissipation @TC=25℃ 41 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Therm

Features

Drain Current.
ID= 3A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: May 9, 2021 |