DMG4N60SK3 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	DMG4N60SK3
Manufacturer	INCHANGE
File Size	261.47 KB
Description	N-Channel MOSFET
Datasheet	DMG4N60SK3-INCHANGE.pdf

DMG4N60SK3 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±30 V ID Drain Current-Continuous 3.7 A IDM Drain Current-Single Pluse 5 A PD Total Dissipation @TC=25℃ 48 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c The

Features

Drain Current.
ID= 3.7A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: May 9, 2021 |