DMS3015SSS - N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated

Datasheet Details

Part number	DMS3015SSS
Manufacturer	DIODES Incorporated
File Size	170.22 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DMS3015SSS_DiodesIncorporated.pdf

DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
Low RDS(ON) - minimizes conduction losses.
Low VSD - reducing the losses due to body diode conduction.
Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses.
Low gate capacitance (Qg/Qgs) ratio.
reduces risk of shootthrough or cross conduction currents at high frequencies.
Avalanche.

📁 DMS3015SSS Similar Datasheet

Other Datasheets by Diodes Incorporated

Published: Oct 16, 2010 |