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DMS3016SFG - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
  • Low RDS(ON).
  • minimize conduction losses.
  • Low VSD.
  • reducing the losses due to body diode conduction.
  • Low Qrr.
  • lower Qrr of the integrated Schottky reduces body diode switching losses.
  • Low gate capacitance (Qg/Qgs) ratio.
  • reduces risk of shoot- through or cross conduction currents at high frequen.

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Green DMS3016SFG N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS 30V RDS(on) max 13mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID TA = 25°C 10.2A 9.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.