DS1230W - 3.3V 256k Nonvolatile SRAM

Dallas

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Datasheet Details

Part number	DS1230W
Manufacturer	Dallas
File Size	214.25 KB
Description	3.3V 256k Nonvolatile SRAM
Datasheet	DS1230W_Dallas.pdf

DS1230W Product details

Description

A0 - A14 DQ0 - DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect 1 of 11 111899 DS1230W DESCRIPTION The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits.Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.When such a condition occurs, the

Features

10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Optional industrial temperature range of -40°C to +85°C, designated IND JEDEC standard 28-pin DIP package New PowerCap Module (.

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Published: Jun 10, 2005 |