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DS1230AB - 256k Nonvolatile SRAM

Dallas

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Datasheet Details

Part number	DS1230AB
Manufacturer	Dallas
File Size	195.78 KB
Description	256k Nonvolatile SRAM
Datasheet	DS1230AB_Dallas.pdf

DS1230AB Product details

Features

10 years minimum data retention in the absence of external power.
Data is automatically protected during power loss.
Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory.
Unlimited write cycles.
Low-power CMOS.
Read and write access times of 70 ns.
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
Full ±10% VCC operating range (DS1230Y).
Optional ±5% VCC operating range (DS1230AB.

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Published: Jun 10, 2005 |