MTD080C10H8 P- & N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C703H8 Issued Date : 2016.11.28 Revised Date : Page No.: 1/14 N- AND P-Channel Enhancement Mode MOSFET MTD080.

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Datasheet Specifications

Part number: MTD080C10H8
Manufacturer: Cystech Electonics
File Size: 661.26 KB
Datasheet: MTD080C10H8-CystechElectonics.pdf
Description: P- & N-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 100V 3.6A 10.4A 74mΩ 82mΩ P-CH -

MTD080C10H8 Distributors

📁 Related Datasheet

MTD-0208N MTD-0218N MTD-0818N MTD-1002N MTD-160 MTD10N05E

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MTD080C10H8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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