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MTD080C10H8 - P- & N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

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Datasheet Details

Part number	MTD080C10H8
Manufacturer	Cystech Electonics
File Size	661.26 KB
Description	P- & N-Channel Enhancement Mode Power MOSFET
Datasheet	MTD080C10H8-CystechElectonics.pdf

MTD080C10H8 Product details

Features

Simple drive requirement.
Low on-resistance.
Fast switching speed.
Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 100V 3.6A 10.4A 74mΩ 82mΩ P-CH -100V -3.1A -8.8A 114mΩ 128mΩ Equivalent Circuit MTD080C10H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTD080C10H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-fre.

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Published: Feb 28, 2017 |