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MTD010P03V8 - P-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package BVDSS ID@ TC=25°C, VGS=-10V ID@ TA=25°C, VGS=-10V RDSON(MAX)@VGS=-10V, ID=-9A RDSON(MAX)@VGS=-4.5V, ID=-5A -30V -40A -10A 11mΩ(typ. ) 16mΩ(typ. ) Equivalent Circuit MTD010P03V8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTD010P03V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape &.

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Datasheet Details

Part number MTD010P03V8
Manufacturer Cystech Electonics
File Size 357.93 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD010P03V8 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTD010P03V8 Spec. No. : C391V8 Issued Date : 2016.11.24 Revised Date : Page No. : 1/10 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25°C, VGS=-10V ID@ TA=25°C, VGS=-10V RDSON(MAX)@VGS=-10V, ID=-9A RDSON(MAX)@VGS=-4.5V, ID=-5A -30V -40A -10A 11mΩ(typ.) 16mΩ(typ.
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