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MTD011N10RQ8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 11.5A 9.2 mΩ(typ) 12.8 mΩ(typ) Symbol MTD011N10RQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTD011N10RQ8-0-T3-G Package Shipping SOP-8 (RoHS compliant & Halogen-free package) 2500 pcs / Tape & Reel Environment.

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Datasheet Details

Part number MTD011N10RQ8
Manufacturer Cystech Electonics
File Size 555.53 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD011N10RQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTD011N10RQ8 Spec. No. : C169Q8 Issued Date : 2015.11.30 Revised Date : 2016.05.25 Page No. : 1/9 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Repetitive Avalanche Rated  Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 11.5A 9.2 mΩ(typ) 12.