MTB16P04J3 - P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB16P04J3
Manufacturer	Cystech Electonics
File Size	403.42 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB16P04J3_CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=0.1mH,.

📁 MTB16P04J3 Similar Datasheet

MTB16N25E - TMOS POWER FET (Motorola)
MTB10000 - LED Lamp Arrays (Marktech Corporate)
MTB10010U - NPN microwave power transistor (NXP)
MTB10062 - Bi-Color LED Lamp Array (Marktech Corporate)
MTB100A06KRH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB10N40E - TMOS POWER FET (Motorola)
MTB11N03BQ8 - N-Channel Logic Level Enhancement Mode Power MOSFET (CYStech Electronics)
MTB11N03BV8 - N-Channel Logic Level Enhancement Mode Power MOSFET (CYStech Electronics)

Other Datasheets by Cystech Electonics

Published: Jul 30, 2011 |