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BTD1805I3 Low Vcesat NPN Epitaxial Planar Transistor

BTD1805I3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Spec.No.: C820I3 Issued Date : 2004.12.19 Revised Date :2012.09.19 P.
The device is manufactured in NPN planar technology by using a “Base Island” layout.

BTD1805I3 Features

* Very low collector-to-emitter saturation voltage
* Fast switching speed
* High current gain characteristic
* Large current capability

BTD1805I3 Applications

* CCFL drivers
* Voltage regulators
* Relay drivers
* High efficiency low voltage switching applications Symbol BTD1805I3 Outline TO-251AB TO-251S B：Base C：Collector E：Emitter BTD1805I3 B CE BCE CYStek Product Specification CYStech Electronics Corp. Spec. No

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Datasheet Details

Part number
BTD1805I3
Manufacturer
Cystech Electonics
File Size
276.97 KB
Datasheet
BTD1805I3_CystechElectonics.pdf
Description
Low Vcesat NPN Epitaxial Planar Transistor

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Low Vcesat NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTD1805I3-like datasheet