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BTD1805AT3 Low Vcesat NPN Epitaxial Planar Transistor

BTD1805AT3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD1805AT3 Spec.No.: C820T3 Issued Date : 2017.01.10 Revised Date : 2018.07.02.
The device is manufactured in NPN planar technology by using a “Base Island” layout.

BTD1805AT3 Features

* Very low collector-to-emitter saturation voltage
* Fast switching speed
* High current gain characteristic
* Large current capability

BTD1805AT3 Applications

* CCFL drivers
* Voltage regulators
* Relay drivers
* High efficiency low voltage switching applications Symbol BTD1805AT3 Outline TO-126 B：Base C：Collector E：Emitter BTD1805AT3 ECB CYStek Product Specification CYStech Electronics Corp. Spec. No. : C820T3 Issued Date : 2017.01

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Datasheet Details

Part number
BTD1805AT3
Manufacturer
CYStech
File Size
435.14 KB
Datasheet
BTD1805AT3-CYStech.pdf
Description
Low Vcesat NPN Epitaxial Planar Transistor

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Low Vcesat NPN Epitaxial Planar Transistor CYStech
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