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BTD1805FP Low Vcesat NPN Epitaxial Planar Transistor

BTD1805FP Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Spec.No.: C820FP Issued Date : 2005.03.29 Revised Date :2013.10.29 P.
The device is manufactured in NPN planar technology by using a “Base Island” layout.

BTD1805FP Features

* Very low collector-to-emitter saturation voltage
* Fast switching speed
* High current gain characteristic
* Large current capability
* RoHS compliant package Symbol BTD1805FP Outline TO-220FP (C forming) TO-220FP (S forming) B：Base C：Collector E：Emitte

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Datasheet Details

Part number
BTD1805FP
Manufacturer
Cystech Electonics
File Size
277.56 KB
Datasheet
BTD1805FP_CystechElectonics.pdf
Description
Low Vcesat NPN Epitaxial Planar Transistor

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Low Vcesat NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTD1805FP-like datasheet