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CY7C2270KV18, CY7C2268KV18 - 36-Mbit DDR II+ SRAM Two-Word Burst Architecture

Cypress Semiconductor

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CY7C2270KV18 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C2270KV18, CY7C2268KV18. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	CY7C2270KV18, CY7C2268KV18
Manufacturer	Cypress Semiconductor
File Size	625.92 KB
Description	36-Mbit DDR II+ SRAM Two-Word Burst Architecture
Datasheet	CY7C2268KV18-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C2270KV18, CY7C2268KV18. Please refer to the document for exact specifications by model.

CY7C2270KV18 Product details

Features

36-Mbit density (2 M × 18, 1 M × 36).
550 MHz clock for high bandwidth.
Two-word burst for reducing address bus frequency.
Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz.
Available in 2.5 clock cycle latency.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Echo clocks (CQ and CQ) simplify data capture in high speed systems.
Data valid pin (QVLD) to indicate valid data on the output.
On.

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Published: Mar 14, 2017 |