CY7C1241KV18 36-Mbit QDR II SRAM 4-Word Burst Architecture

Cypress Semiconductor

Description

36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C.
Functional Description The CY7C1241KV18, CY7C1256KV18, CY7C1243KV18, and CY7C1245KV18 are 1.

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Datasheet Specifications

Part number: CY7C1241KV18
Manufacturer: Cypress Semiconductor
File Size: Direct Link
Datasheet: CY7C1241KV18_CypressSemiconductor.pdf
Description: 36-Mbit QDR II SRAM 4-Word Burst Architecture

Features

* Configurations With Read Cycle Latency of 2.0 cycles: CY7C1241KV18
* 4 M × 8 CY7C1256KV18
* 4 M × 9 CY7C1243KV18
* 2 M × 18 CY7C1245KV18
* 1 M × 36 Separate independent read and write data ports
* Supports concurrent transactions 450 MHz clock for high ban

CY7C1241KV18 Distributors

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CY7C1241KV18 36-Mbit QDR SRAM 4-Word Burst Architecture Cypress Semiconductor

Cypress Semiconductor CY7C1241KV18-like datasheet