CY7C1161KV18 18-Mbit QDR II SRAM Four-Word Burst Architecture

Cypress Semiconductor

Description

CY7C1161KV18, CY7C1176KV18 CY7C1163KV18, CY7C1165KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) .
The CY7C1161KV18, CY7C1176KV18, CY7C1163KV18, and CY7C1165KV18 are 1.

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Datasheet Specifications

Part number: CY7C1161KV18
Manufacturer: Cypress Semiconductor
File Size: 908.73 KB
Datasheet: CY7C1161KV18_CypressSemiconductor.pdf
Description: 18-Mbit QDR II SRAM Four-Word Burst Architecture

Features

* Configurations With Read Cycle Latency of 2.5 cycles: CY7C1161KV18
* 2 M x 8 CY7C1176KV18
* 2 M x 9 CY7C1163KV18
* 1 M x 18 CY7C1165KV18
* 512 K x 36 Separate independent read and write data ports
* Supports concurrent transactions 550-MHz clock for high b

CY7C1161KV18 Distributors

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CY7C1161KV18 18-Mbit QDR SRAM Four-Word Burst Architecture Cypress Semiconductor

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